Nanoscale phase change memory with graphene ribbon electrodes

Nanoscale phase change memory with graphene ribbon electrodes

Ashkan Behnam, Feng Xiong, Andrea Cappelli, Ning C. Wang, Enrique A. Carrion, Sungduk Hong, Yuan Dai, Austin S. Lyons, Edmond K. Chow, Enrico Piccinini, Carlo Jacoboni, and Eric Pop Department of Electrical and Computer Engineering and Micro and Nanotechnology Lab, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA Department of Electrical Engineering, Stanford University, ...

Nanoscale control of graphene electrodes.

Single layer graphene nano-gaps are fabricated by applying the method of feedback-controlled electroburning to notched ribbon devices, which are plasma etched from CVD grown graphene that is wet-transferred onto pre-patterned metal electrodes. Electrical and structural characterizations show that nanometer size gaps form at the center of the notch. We have processed a total number of 1079 devic...

Thermal Properties of Nanostructured Electrodes for Phase Change Memory Devices

Minimum voltage for threshold switching in nanoscale phase-change memory.

The size scaling of the threshold voltage required for the amorphous-to-crystalline transition in phase-change memory (PCM) is investigated using planar devices incorporating individual GeTe and Sb2Te3 nanowires. We show that the scaling law governing threshold switching changes from constant field to constant voltage scaling as the amorphous domain length falls below 10 nm. This crossover is a...

Graphene Nano-Ribbon Electronics

We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The ele...